Product Appearance
Front Side
Rear Side
Physical Characteristics
| Substrate material | N type, Phosphorus doped,monocrystalline silicon wafer |
| Thickness | 130±10%um |
| Dimension | 182.2mm*183.75mm±0.25mm,256mm±0.25mm |
| Front Side | 16 Bus Bars,172±10%fingers,blue antireflection layer(SiNx) |
| Rear Side | 16 Bus Bars,178±10%fingers,blue antireflection layer(SiNx) |
IV Curve
Temperature Coefficients
| Power Temperature Coefficient |
-(0.30±0.02) %/K |
|
Voltage Temperature Coefficient |
-(0.26±0.03) %/K |
|
Current Temperature Coefficientt |
+(0.046±0.015) %/K |
Electrical data
| Eff. Grade（%） | Isc(A) | Voc(V) | Impp(A) | Vmpp(V) | Pmpp(W) | FF（%） |
| 25.5 | 13.947 | 0.730 | 13.441 | 0.635 | 8.54 | 83.83 |
| 25.4 | 13.964 | 0.728 | 13.431 | 0.633 | 8.50 | 83.63 |
| 25.3 | 13.956 | 0.727 | 13.442 | 0.630 | 8.47 | 83.46 |
| 25.2 | 13.939 | 0.726 | 13.452 | 0.627 | 8.43 | 83.35 |
| 25.1 | 13.919 | 0.725 | 13.442 | 0.625 | 8.40 | 83.25 |
| 25.0 | 13.895 | 0.724 | 13.453 | 0.622 | 8.37 | 83.18 |
| 24.9 | 13.857 | 0.723 | 13.421 | 0.621 | 8.33 | 83.19 |
| 24.8 | 13.807 | 0.722 | 13.388 | 0.620 | 8.30 | 83.27 |
| 24.7 | 13.777 | 0.721 | 13.356 | 0.619 | 8.27 | 83.23 |
| 24.6 | 13.738 | 0.720 | 13.323 | 0.618 | 8.23 | 83.24 |
|
24.5 |
13.700 | 0.719 | 13.291 | 0.617 | 8.20 | 83.25 |
| 24.4 | 13.676 | 0.718 | 13.258 | 0.616 | 8.17 | 83.17 |
| 24.3 | 13.657 | 0.717 | 13.225 | 0.615 | 8.13 | 83.06 |
| 24.2 | 13.627 | 0.716 | 13.192 | 0.614 | 8.10 | 83.02 |
| 24.1 | 13.599 | 0.715 | 13.159 | 0.613 | 8.07 | 82.96 |
All electrical data measured under standard test conditions: 1000W/m2, AM 1.5, 25°C.
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